Applying the green Ca2Al3O6F:Eu2+ oxyfluoride phosphorus on white emitting diodes

نویسندگان

چکیده

<span lang="EN-GB"><span lang="EN-GB">Ca<sub>2</sub>Al<sub>3</sub>O<sub>6</sub>F:Eu<sup>2+</sup>, a new green-emitting and its photoluminescence (PL) characteristics for white-emitting diodes, have been analyzed generated (w-LEDs). This phosphorus displays strong absorption range between </span></span>ultraviolet (UV) blue region, along with wide green emission of 502 nm. The procedure concentration suppression Eu<sup>2+ </sup>luminous longevity has investigated using Ca<sub>2</sub>Al<sub>3</sub>O<sub>6</sub>F:Eu<sup>2+</sup> phosphors. Key manufacturing w-LED lamps, such as photoluminesce based on temperature, microstructure, morphology, CIE value quantum efficiency, were also in Ca<sub>2</sub>Al<sub>3</sub>O<sub>6</sub>F:Eu<sup>2+</sup>. findings show that Ca<sub>2</sub>Al<sub>3</sub>O<sub>6</sub>F:Eu<sup>2+</sup>, is suitable option almost UV-excited w-LEDs component.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Green light emitting diodes on a-plane GaN bulk substrates

We report the development of 520–540 nm green light emitting diodes LEDs grown along the nonpolar a axis of GaN. GaInN /GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphi...

متن کامل

The quantum efficiency of green GaInN/GaN light emitting diodes

Energy efficient lighting can be achieved by help of high efficiency light emitting diodes (LEDs). Substantial performance gains are feasible in the green – 500–555 nm – spectral region by implementing proper design of the active region. Here we analyze external quantum efficiency of high performing LED dies as a function of current and temperature in order to formulate relevant optimization ru...

متن کامل

All non-dopant red–green–blue composing white organic light-emitting diodes

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1-naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4-diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl-1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8-hydroxyquinolinato)aluminum (Alq3). The ...

متن کامل

InGaN green light emitting diodes with deposited nanoparticles

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurem...

متن کامل

Strategies to Achieve High-Performance White Organic Light-Emitting Diodes

As one of the most promising technologies for next-generation lighting and displays, white organic light-emitting diodes (WOLEDs) have received enormous worldwide interest due to their outstanding properties, including high efficiency, bright luminance, wide viewing angle, fast switching, lower power consumption, ultralight and ultrathin characteristics, and flexibility. In this invited review,...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science

سال: 2022

ISSN: ['2502-4752', '2502-4760']

DOI: https://doi.org/10.11591/ijeecs.v27.i2.pp754-759